TY - JOUR
T1 - Deep reactive ion etching of silicon carbide
AU - Tanaka, S.
AU - Rajanna, K.
AU - Abe, T.
AU - Esashi, M.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2001/11
Y1 - 2001/11
N2 - More than 100-μm-deep reaction ion etching (RIE) of silicon carbide (SiC) for microelectromechanical systems used in harsh environments were performed. Sulfur hexafluoride mixed with oxygen was used as an etching gas and electroplated nickel was used as a mask. First, 5 h etching experiments using etching gases with 0%, 5%, and 20% oxygen were performed by supplying rf power of 150 and 130 W to an ICP antenna and a sample stage. Following this, a 7 h etching experiment using an etching gas with 5% oxygen was performed by increasing the rf power to the sample stage of 150 W. The resulting data was analyzed in detail.
AB - More than 100-μm-deep reaction ion etching (RIE) of silicon carbide (SiC) for microelectromechanical systems used in harsh environments were performed. Sulfur hexafluoride mixed with oxygen was used as an etching gas and electroplated nickel was used as a mask. First, 5 h etching experiments using etching gases with 0%, 5%, and 20% oxygen were performed by supplying rf power of 150 and 130 W to an ICP antenna and a sample stage. Following this, a 7 h etching experiment using an etching gas with 5% oxygen was performed by increasing the rf power to the sample stage of 150 W. The resulting data was analyzed in detail.
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U2 - 10.1116/1.1418401
DO - 10.1116/1.1418401
M3 - Article
AN - SCOPUS:0035519479
VL - 19
SP - 2173
EP - 2176
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 6
ER -