Deep reactive ion etching of silicon carbide

S. Tanaka, K. Rajanna, T. Abe, M. Esashi

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)

Abstract

More than 100-μm-deep reaction ion etching (RIE) of silicon carbide (SiC) for microelectromechanical systems used in harsh environments were performed. Sulfur hexafluoride mixed with oxygen was used as an etching gas and electroplated nickel was used as a mask. First, 5 h etching experiments using etching gases with 0%, 5%, and 20% oxygen were performed by supplying rf power of 150 and 130 W to an ICP antenna and a sample stage. Following this, a 7 h etching experiment using an etching gas with 5% oxygen was performed by increasing the rf power to the sample stage of 150 W. The resulting data was analyzed in detail.

Original languageEnglish
Pages (from-to)2173-2176
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number6
DOIs
Publication statusPublished - 2001 Nov

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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