Deep reactive ion etching of Pyrex glass

Xinghua Li, Takashi Abe, Masayoshi Esashi

Research output: Contribution to conferencePaper

28 Citations (Scopus)

Abstract

We have developed a deep reactive ion etching of Pyrex glass in SF6 plasma. High etch rate (approximately 0.6 μm/min) and smooth surface (Ra to approximately 4 nm) were achieved at low pressure (0.2 Pa) and high self-bias (-390 V). This result indicates energetic ions for physical sputtering and for enhancing chemical reactions are required to etch materials which produce nonvolatile reaction products. Vertical etch profile (base angle approximately 88°), high aspect ratio (>10) and through-out etching of Pyrex glass (200 μm in thickness) were achieved when the mask opening is narrower than 20 μm. Relatively low selectivity to the mask material due to the energetic ion is overcame using thick and vertical electroplated Ni film as a mask. We also find out the base angle of the etch profile depends on the mask profile and the opening width.

Original languageEnglish
Pages271-276
Number of pages6
Publication statusPublished - 2000 Jan 1
Event13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) - Miyazaki, Jpn
Duration: 2000 Jan 232000 Jan 27

Other

Other13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000)
CityMiyazaki, Jpn
Period00/1/2300/1/27

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Li, X., Abe, T., & Esashi, M. (2000). Deep reactive ion etching of Pyrex glass. 271-276. Paper presented at 13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000), Miyazaki, Jpn, .