Deep reactive ion etching of lead zirconate titanate using sulfur hexafluoride gas

Shinan Wang, Xinghua Li, Katsuhiro Wakabayashi, Masayoshi Esashi

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

A deep reactive ion etching (RIE) technique that uses sulfur hexafluoride (SF6) gas has been developed for lead zirconate titanate (Pb(Zr,Ti)O3, PZT) three-dimensional microfabrication from PZT ceramic blocks. The etching was performed by using an inductively coupled plasma that was generated in a narrow-gap vacuum chamber. The etch depth was 70 urn with a maximum etch rate of 0.3 μm/min and a selectivity of PZT to the electroplated nickel mask of >35:1. The sidewalls of the PZT structures were tapered, with base angles of ∼75°. Both positive RIE lag and unexpected ultrafine-slit etching phenomena were observed.

Original languageEnglish
Pages (from-to)1339-1641
Number of pages303
JournalJournal of the American Ceramic Society
Volume82
Issue number5
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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