Abstract
A deep reactive ion etching (RIE) technique that uses sulfur hexafluoride (SF6) gas has been developed for lead zirconate titanate (Pb(Zr,Ti)O3, PZT) three-dimensional microfabrication from PZT ceramic blocks. The etching was performed by using an inductively coupled plasma that was generated in a narrow-gap vacuum chamber. The etch depth was 70 urn with a maximum etch rate of 0.3 μm/min and a selectivity of PZT to the electroplated nickel mask of >35:1. The sidewalls of the PZT structures were tapered, with base angles of ∼75°. Both positive RIE lag and unexpected ultrafine-slit etching phenomena were observed.
| Original language | English |
|---|---|
| Pages (from-to) | 1339-1641 |
| Number of pages | 303 |
| Journal | Journal of the American Ceramic Society |
| Volume | 82 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1999 |
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry
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Wang, S., Li, X., Wakabayashi, K., & Esashi, M. (1999). Deep reactive ion etching of lead zirconate titanate using sulfur hexafluoride gas. Journal of the American Ceramic Society, 82(5), 1339-1641. https://doi.org/10.1111/j.1151-2916.1999.tb01919.x