TY - JOUR
T1 - Deep reactive ion etching of lead zirconate titanate using sulfur hexafluoride gas
AU - Wang, Shinan
AU - Li, Xinghua
AU - Wakabayashi, Katsuhiro
AU - Esashi, Masayoshi
PY - 1999
Y1 - 1999
N2 - A deep reactive ion etching (RIE) technique that uses sulfur hexafluoride (SF6) gas has been developed for lead zirconate titanate (Pb(Zr,Ti)O3, PZT) three-dimensional microfabrication from PZT ceramic blocks. The etching was performed by using an inductively coupled plasma that was generated in a narrow-gap vacuum chamber. The etch depth was 70 urn with a maximum etch rate of 0.3 μm/min and a selectivity of PZT to the electroplated nickel mask of >35:1. The sidewalls of the PZT structures were tapered, with base angles of ∼75°. Both positive RIE lag and unexpected ultrafine-slit etching phenomena were observed.
AB - A deep reactive ion etching (RIE) technique that uses sulfur hexafluoride (SF6) gas has been developed for lead zirconate titanate (Pb(Zr,Ti)O3, PZT) three-dimensional microfabrication from PZT ceramic blocks. The etching was performed by using an inductively coupled plasma that was generated in a narrow-gap vacuum chamber. The etch depth was 70 urn with a maximum etch rate of 0.3 μm/min and a selectivity of PZT to the electroplated nickel mask of >35:1. The sidewalls of the PZT structures were tapered, with base angles of ∼75°. Both positive RIE lag and unexpected ultrafine-slit etching phenomena were observed.
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U2 - 10.1111/j.1151-2916.1999.tb01919.x
DO - 10.1111/j.1151-2916.1999.tb01919.x
M3 - Article
AN - SCOPUS:0000789222
VL - 82
SP - 1339
EP - 1641
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 5
ER -