Deep levels and minority carrier lifetime in proton irradiated silicon pin diode

T. Sasaki, J. Nishizawa, M. Esashi

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Deep levels induced by MeV-proton irradiation in n-(v) region of Si p-v-n diodes were investigated by photocapacitance method under constant capacitance condition. Electrical property, dosage dependence, spatial distribution, and annealing behavior of the deep levels were studied. Carrier lifetime reduction in pin diodes by the deep level was examined by current-voltage characteristics and impedance measurements. From proton dosage dependence and annealing effect, the decreasing behavior of minority carrier lifetime with increasing deep level density was revealed.

Original languageEnglish
Pages (from-to)4069-4074
Number of pages6
JournalJournal of Applied Physics
Volume83
Issue number8
DOIs
Publication statusPublished - 1998 Apr 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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