Deep level in InP crystal grown by the horizontal bridgman method under controlled phosphorus vapor pressure

Atsushi Shimizu, Jun Ichi Nishizawa, Yutaka Oyama, Ken Suto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

InP crystals were grown by the horizontal Bridgman (HB) method under a controlled ambient phosphorus vapor pressure. The relationship between the phosphorus vapor pressure and crystal defects was investigated. Crystals grown under a lower phosphorus vapor pressure have an In-rich composition. P-vacancy related photoluminescence (PL) emission at 1.1 eV decreased in growth under a higher phosphorus vapor pressure. The ion density at Ec -1.1 eV also decreased according to results of photocapacitance measurement. It was considered that crystals became a P-rich composition from an In-rich one by growth under higher phosphorus vapor pressure of 23 or 29 atm. This corresponds to the results of coulometric titration analysis. In the InP crystal grown under the phosphorus pressure of 33 atm, the density of the deep level was undetectable by PL or photocapacitance measurement.

Original languageEnglish
Pages (from-to)3863-3866
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number7 A
DOIs
Publication statusPublished - 2000

Keywords

  • Bridgman
  • Deep level
  • InP
  • Phosphorus vapor pressure
  • Photocapacitance
  • Photoluminescence
  • Stoichiometry

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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