Deep Electron Traps in Undoped GaAs Grown by MOCVD

Tamotsu Hashizume, Eiji Ikeda, Yuji Akatsu, Hideo Ohno, Hideki Hasegawa

Research output: Contribution to journalArticle

15 Citations (Scopus)


Deep electron traps in undoped GaAs grown by metalorganic chemical vapor deposition (MOCVD) have been investigated using DLTS measurement. Five electron traps were detected. The dominant trap shows an activation energy of 0.80±0.02 eV, which is probably the same level as EL2 in conventional VPE GaAs layers. The remaining four traps were only observed in samples grown with a particular trimethylgallium (TMG) source, and were below the detection limit (5×1011-5×1012cm-3) with other TMG sources. These results strongly indicate that the four traps are due to impurities in the source material.

Original languageEnglish
Pages (from-to)L296-L298
JournalJapanese journal of applied physics
Issue number5
Publication statusPublished - 1984 May
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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