Decomposition of on-current variability of nMOS FinFETs for prediction beyond 20 nm

Takashi Matsukawa; Yongxun Liu; Shin Ichi O'Uchi; Kazuhiko Endo; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Hiroyuki Ota; Shinji Migita; Yukinori Morita; Wataru Mizubayashi; Kunihiro Sakamoto; Meishoku Masahara

doi:10.1109/TED.2012.2196766

Decomposition of on-current variability of nMOS FinFETs for prediction beyond 20 nm

Takashi Matsukawa, Yongxun Liu, Shin Ichi O'Uchi, Kazuhiko Endo, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Hiroyuki Ota, Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Kunihiro Sakamoto, Meishoku Masahara

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

ON-current (I _on) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of I _on are successfully extracted as independent contributions of threshold voltage V _t, transconductance G _m, and parasitic resistance R _para. As well as V _t variability, G _m variation exhibits a linear relationship in the Pelgrom plot. However, the G _m variation is not reduced with scaling the gate dielectric thickness unlike the V _t variation. Perspective for 14-nm FinFETs represents that the G _m variation will be the dominant I _on variation source. A solution to reduce the G _m variation for the FinFET is also proposed.

Original language	English
Article number	6202330
Pages (from-to)	2003-2010
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	8
DOIs	https://doi.org/10.1109/TED.2012.2196766
Publication status	Published - 2012
Externally published	Yes

Keywords

Fin-shaped field-effect transistor (FinFET)
mobility
on-current
parasitic resistance
scaling
transconductance
variability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2012.2196766

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Matsukawa, T., Liu, Y., O'Uchi, S. I., Endo, K., Tsukada, J., Yamauchi, H., Ishikawa, Y., Ota, H., Migita, S., Morita, Y., Mizubayashi, W., Sakamoto, K., & Masahara, M. (2012). Decomposition of on-current variability of nMOS FinFETs for prediction beyond 20 nm. IEEE Transactions on Electron Devices, 59(8), 2003-2010. [6202330]. https://doi.org/10.1109/TED.2012.2196766

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title = "Decomposition of on-current variability of nMOS FinFETs for prediction beyond 20 nm",

abstract = "ON-current (I on) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of I on are successfully extracted as independent contributions of threshold voltage V t, transconductance G m, and parasitic resistance R para. As well as V t variability, G m variation exhibits a linear relationship in the Pelgrom plot. However, the G m variation is not reduced with scaling the gate dielectric thickness unlike the V t variation. Perspective for 14-nm FinFETs represents that the G m variation will be the dominant I on variation source. A solution to reduce the G m variation for the FinFET is also proposed.",

keywords = "Fin-shaped field-effect transistor (FinFET), mobility, on-current, parasitic resistance, scaling, transconductance, variability",

author = "Takashi Matsukawa and Yongxun Liu and O'Uchi, {Shin Ichi} and Kazuhiko Endo and Junichi Tsukada and Hiromi Yamauchi and Yuki Ishikawa and Hiroyuki Ota and Shinji Migita and Yukinori Morita and Wataru Mizubayashi and Kunihiro Sakamoto and Meishoku Masahara",

note = "Funding Information: Manuscript received January 10, 2012; revised March 14, 2012 and April 5, 2012; accepted April 20, 2012. Date of publication May 17, 2012; date of current version July 19, 2012. This work is supported in part by NEDO under the Development of Nanoelectronics Devices Technology Project. The review of this paper was arranged by Editor H. Shang. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2012",

doi = "10.1109/TED.2012.2196766",

language = "English",

volume = "59",

pages = "2003--2010",

journal = "IEEE Transactions on Electron Devices",

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T1 - Decomposition of on-current variability of nMOS FinFETs for prediction beyond 20 nm

AU - Matsukawa, Takashi

AU - Liu, Yongxun

AU - O'Uchi, Shin Ichi

AU - Endo, Kazuhiko

AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Ishikawa, Yuki

AU - Ota, Hiroyuki

AU - Migita, Shinji

AU - Morita, Yukinori

AU - Mizubayashi, Wataru

AU - Sakamoto, Kunihiro

AU - Masahara, Meishoku

N1 - Funding Information: Manuscript received January 10, 2012; revised March 14, 2012 and April 5, 2012; accepted April 20, 2012. Date of publication May 17, 2012; date of current version July 19, 2012. This work is supported in part by NEDO under the Development of Nanoelectronics Devices Technology Project. The review of this paper was arranged by Editor H. Shang. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012

Y1 - 2012

N2 - ON-current (I on) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of I on are successfully extracted as independent contributions of threshold voltage V t, transconductance G m, and parasitic resistance R para. As well as V t variability, G m variation exhibits a linear relationship in the Pelgrom plot. However, the G m variation is not reduced with scaling the gate dielectric thickness unlike the V t variation. Perspective for 14-nm FinFETs represents that the G m variation will be the dominant I on variation source. A solution to reduce the G m variation for the FinFET is also proposed.

AB - ON-current (I on) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of I on are successfully extracted as independent contributions of threshold voltage V t, transconductance G m, and parasitic resistance R para. As well as V t variability, G m variation exhibits a linear relationship in the Pelgrom plot. However, the G m variation is not reduced with scaling the gate dielectric thickness unlike the V t variation. Perspective for 14-nm FinFETs represents that the G m variation will be the dominant I on variation source. A solution to reduce the G m variation for the FinFET is also proposed.

KW - Fin-shaped field-effect transistor (FinFET)

KW - mobility

KW - on-current

KW - parasitic resistance

KW - scaling

KW - transconductance

KW - variability

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Decomposition of on-current variability of nMOS FinFETs for prediction beyond 20 nm

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Keywords

ASJC Scopus subject areas

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