ON-current (I on) variability is comprehensively investigated for fin-shaped FETs (FinFETs) by measurement-based analysis. Variation sources of I on are successfully extracted as independent contributions of threshold voltage V t, transconductance G m, and parasitic resistance R para. As well as V t variability, G m variation exhibits a linear relationship in the Pelgrom plot. However, the G m variation is not reduced with scaling the gate dielectric thickness unlike the V t variation. Perspective for 14-nm FinFETs represents that the G m variation will be the dominant I on variation source. A solution to reduce the G m variation for the FinFET is also proposed.
- Fin-shaped field-effect transistor (FinFET)
- parasitic resistance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering