Abstract
We report quantitative measurements on the decay of optical absorption at various elevated temperatures in ultraviolet (UV)-irradiated SiO2 glasses doped with Ge. From the Arrhenius plots of decay time constants, the activation energy of the GeE′ center in the UV-irradiated glasses has been determined to be 2.4±0.3eV, while the reported activation energy of GeE′ decay in UV-poled glasses is 0.4±0.1eV. The present experimental results strongly suggest that the decay process of the GeE′ center induced in UV-irradiated glasses is quite different from that in UV-poled glasses.
Original language | English |
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Pages (from-to) | 1481-1483 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 73 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1998 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)