Decay of ultraviolet-induced optical absorption in Ge-doped SiO2 glass

Motoshi Ohama, Takumi Fujiwara, Akira J. Ikushima

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8 Citations (Scopus)


We report quantitative measurements on the decay of optical absorption at various elevated temperatures in ultraviolet (UV)-irradiated SiO2 glasses doped with Ge. From the Arrhenius plots of decay time constants, the activation energy of the GeE center in the UV-irradiated glasses has been determined to be 2.4±0.3eV, while the reported activation energy of GeE decay in UV-poled glasses is 0.4±0.1eV. The present experimental results strongly suggest that the decay process of the GeE center induced in UV-irradiated glasses is quite different from that in UV-poled glasses.

Original languageEnglish
Pages (from-to)1481-1483
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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