Decay behavior of photo-induced defects in a Ge-doped SiO2 glass with photosensitivity and 2nd-order optical nonlinearity has been presented. It has been found that the decay of induced GeE′ in a UV-irradiated glass is quite different from that in a UV-poled glass.
|Number of pages||2|
|Publication status||Published - 1998 Dec 1|
|Event||Proceedings of the 1998 24th European Conference on Optical Communication, ECOC. Part 1 (of 3) - Madrid, Spain|
Duration: 1998 Sep 20 → 1998 Sep 24
|Other||Proceedings of the 1998 24th European Conference on Optical Communication, ECOC. Part 1 (of 3)|
|Period||98/9/20 → 98/9/24|
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