Decay behavior of UV-induced defects in Ge-doped SiO2 glass

M. Ohama, T. Fujiwara, A. J. Ikushima

Research output: Contribution to conferencePaper

Abstract

Decay behavior of photo-induced defects in a Ge-doped SiO2 glass with photosensitivity and 2nd-order optical nonlinearity has been presented. It has been found that the decay of induced GeE′ in a UV-irradiated glass is quite different from that in a UV-poled glass.

Original languageEnglish
Pages141-142
Number of pages2
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 24th European Conference on Optical Communication, ECOC. Part 1 (of 3) - Madrid, Spain
Duration: 1998 Sep 201998 Sep 24

Other

OtherProceedings of the 1998 24th European Conference on Optical Communication, ECOC. Part 1 (of 3)
CityMadrid, Spain
Period98/9/2098/9/24

ASJC Scopus subject areas

  • Engineering(all)

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    Ohama, M., Fujiwara, T., & Ikushima, A. J. (1998). Decay behavior of UV-induced defects in Ge-doped SiO2 glass. 141-142. Paper presented at Proceedings of the 1998 24th European Conference on Optical Communication, ECOC. Part 1 (of 3), Madrid, Spain, .