de Haas–van Alphen Effect and Fermi Surface Properties in Single-Crystalline ThCu2Si2

Ai Nakamura, Fuminori Honda, Yoshiya Homma, Dexin Li, Yusei Shimizu, Arvind Maurya, Yoshiki J. Sato, Hisatomo Harima, Yoshichika Ōnuki, Dai Aoki

Research output: Contribution to journalArticle

Abstract

We succeeded in growing high-quality single crystals of ThCu2Si2 with the ThCr2Si2-type tetragonal structure by the Sn-flux method and measured the electrical resistivity, specific heat, and de Haas–van Alphen (dHvA) effect to study the Fermi surface properties. Comparing this experiment results with those of the full-potential LAPW band calculation, we found that the detected main dHvA branches named α, αA, γ1, and γ2 correspond to two-hole Fermi surfaces, while branches β and βA correspond to an electron Fermi surface centered at the Γ point in the Brillouin zone. The detected dHvA branches are well explained by the results of the band calculations. The detected cyclotron effective masses are in the range from 0.25 to 1.02m0, where m0 is the rest mass of an electron. The obtained Fermi surfaces of ThCu2Si2 are compared with those of the heavy-fermion superconductor CeCu2Si2 from the viewpoint of the Fermi surface properties.

Original languageEnglish
Article number094703
Journaljournal of the physical society of japan
Volume89
Issue number9
DOIs
Publication statusPublished - 2020 Sep 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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