De Haas-van Alphen effect study of CeRu2Si2

H. Aoki, M. Takashita, S. Uji, T. Terashima, K. Maezawa, R. Settai, Y. Onuki

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We report an extensive study of the angular dependence of the de Haas-van Alphen frequencies for the field directions in the (0 1 0) and (0 0 1) planes, and the field dependence of the effective masses and frequencies below and above the metamagnetic transition field (Hm) in CeRu2Si2. The present study confirms our previous conclusion that the Fermi surfaces change from those of itinerant f electrons below Hm to those of localized f electons above Hm.

Original languageEnglish
Pages (from-to)26-28
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume206-207
Issue numberC
DOIs
Publication statusPublished - 1995 Feb 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Aoki, H., Takashita, M., Uji, S., Terashima, T., Maezawa, K., Settai, R., & Onuki, Y. (1995). De Haas-van Alphen effect study of CeRu2Si2. Physica B: Physics of Condensed Matter, 206-207(C), 26-28. https://doi.org/10.1016/0921-4526(94)00358-3