De Haas-van Alphen effect study of CeCo2 under pressure

M. Takashita, H. Aoki, T. Terashima, C. Terakura, T. Matsumoto, T. Nishigaki, H. Sugawara, Y. Aoki, H. Sato

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

We have performed the dHvA effect study under pressure in the itinerant f electron system CeCo2 to investigate the difference in the pressure effects on the Fermi surface properties from those in the strongly correlated f electron systems. The frequency changes with pressure are larger than those of normal metals and qualitatively different depending on the orbit. However, the magnitude of the frequency change is much smaller than that observed in the heavy fermion compound CeRu2Si2.

Original languageEnglish
Pages (from-to)738-739
Number of pages2
JournalPhysica B: Condensed Matter
Volume281-282
DOIs
Publication statusPublished - 2000 Jun 1
EventYamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Jpn
Duration: 1999 Aug 241999 Aug 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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