de Haas-van Alphen Effect of CeSb under Pressure

Masahiro Takashita, Haruyoshi Aoki, Christopher John Haworth, Takehiko Matsumoto, Taichi Terashima, Shinya Uji, Chieko Terakura, Takahiro Miura, Akihiro Uesawa, Takashi Suzuki

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We report a de Haas-van Alphen effect study of CeSb in the high-field ferromagnetic (F) and intermediate-field antiferromagnetic (AFF1) phases. In the F phase, the frequencies of the electron surfaces increase monotonically with pressure. On the other hand, the frequency of one particular hole surface increases with pressure, while those of the other hole surfaces decrease sligthly. The effective masses of all the hole surfaces increase similarly with pressure while those of the electron surfaces change little. In the AFF1 phase, other hole surfaces than the particular one have qualitatively different pressure dependence from that in the F phase. The frequency changes both in the F and AFF1 phases can be explained by taking the anisotropic P-f mixing model into account. However, it is difficult to understand the changes of the effective masses in terms of the f content expected for the p-f mixing model.

Original languageEnglish
Pages (from-to)3859-3866
Number of pages8
Journaljournal of the physical society of japan
Issue number11
Publication statusPublished - 1998 Nov


  • CeSb
  • Fermi surface
  • Pressure effect
  • de Haas-van Alphen effect
  • p-f mixing model

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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