De Haas-van Alphen effect in USb

Akira Ochiai, E. Hotta, Y. Haga, T. Suzuki, Y. Suzuki, T. Shikama, K. Suzuki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Uranium monopnictides are well known to show various antiferromagnetic orders. In this case, series, the degree of the localization is an important topic on which the interests of many researchers have been focused. However, high-quality samples are needed for such investigation. We grew single crystals of USb with a ratio of resistivity (r.r.r.) of more than 30 by the Bridgman method and subsequent annealing. Using this high-quality sample we succeeded in observing the de Haas-van Alphen signal in USb.

Original languageEnglish
Pages (from-to)789-791
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume206-207
Issue numberC
DOIs
Publication statusPublished - 1995 Feb 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Ochiai, A., Hotta, E., Haga, Y., Suzuki, T., Suzuki, Y., Shikama, T., & Suzuki, K. (1995). De Haas-van Alphen effect in USb. Physica B: Physics of Condensed Matter, 206-207(C), 789-791. https://doi.org/10.1016/0921-4526(94)00585-J