De Haas-van Alphen effect in Rh2Ga9 and Ir2Ga9 without inversion symmetry in the crystal structure and related compounds T2Al9 (T: Co, Rh, Ir) with inversion symmetry

Masataka Takeda, Atsushi Teruya, Ai Nakamura, Hisatomo Harima, Masato Hedo, Takao Nakama, Yoshichika Onuki

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3 Citations (Scopus)


We succeeded in growing high-quality single crystals of Rh2Ga9 and Ir2Ga9 with the non-centrosymmetric (distorted Co2Al9-type) monoclinic structure by the Ga-self flux method, and carried out the de Haas-van Alphen (dHvA) experiments. The Fermi surface is found to be split into two different Fermi surfaces, reflecting the non-centrosymmetric crystal structure. A magnitude of the antisymmetric spin-orbit interaction or a splitting energy between the two Fermi surfaces are determined to be 56K for dHvA branch α and 45K for branch β in Rh2Ga9, where these dHvA branches correspond to main Fermi surfaces. The present splitting values are compared with 290 and 130 K in Ir2Ga9, respectively. The splitting energy is found to be larger in the Ir-5d conduction electrons than in the Rh-4d conduction electrons. The split dHvA branches in Rh2Ga9 and Ir2Ga9 are also compared with the single dHvA branch in Co2Al9, Rh2Al9, and Ir2Al9 with inversion symmetry in the crystal structure.

Original languageEnglish
Article number024701
Journaljournal of the physical society of japan
Issue number2
Publication statusPublished - 2015 Feb 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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