De Haas-van Alphen effect in GdAs

Y. Nakanishi, F. Takahashi, T. Sakon, M. Yoshida, D. X. Li, T. Suzuki, M. Motokawa

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

We have for the first time observed de Haas-van Alphen effect in GdAs below the Neel temperature in magnetic fields up to 15 T. The Fermi surface consists of three ellipsoidal electron surfaces and a spherical surface. We have also determined the corresponding effective masses and mean free paths. Furthermore, by analyzing the angular dependence of Fermi surface, the number of carriers belonging to each Fermi surface is estimated. It is consistent with that measured by the Hall effect. In GdX as the lattice constant is increased, the number of carriers decreases. On the other hand, however, GdAs has less carrier concentration compared to that of GdSb.

Original languageEnglish
Pages (from-to)750-751
Number of pages2
JournalPhysica B: Condensed Matter
Volume281-282
DOIs
Publication statusPublished - 2000 Jun 1
EventYamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Jpn
Duration: 1999 Aug 241999 Aug 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Nakanishi, Y., Takahashi, F., Sakon, T., Yoshida, M., Li, D. X., Suzuki, T., & Motokawa, M. (2000). De Haas-van Alphen effect in GdAs. Physica B: Condensed Matter, 281-282, 750-751. https://doi.org/10.1016/S0921-4526(99)01030-3