De Haas-van Alphen effect in CeTl3 under pressure

R. Settai, T. Endo, T. Fujie, Y. Onuki, D. Aoki, I. Sheikin

Research output: Contribution to journalArticle

Abstract

We report the pressure dependence of electrical resistivity and de Haas-van Alphen effect in an antiferromagnet CeTl3. With increasing pressure the Néel temperature TN decreases monotonically and both ρ0 and A values of the resistivity ρ = ρ0 + AT2 in the Fermi liquid relation increase, reflecting the approach to the quantum critical point. The critical pressure Pc is estimated to be about 6 GPa. The cyclotron effective masses also increase with increasing pressure.

Original languageEnglish
Pages (from-to)766-768
Number of pages3
JournalPhysica B: Condensed Matter
Volume403
Issue number5-9
DOIs
Publication statusPublished - 2008 Apr 1

Keywords

  • CeTl
  • De Haas-van Alphen effect
  • Pressure
  • Quantum critical point

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Settai, R., Endo, T., Fujie, T., Onuki, Y., Aoki, D., & Sheikin, I. (2008). De Haas-van Alphen effect in CeTl3 under pressure. Physica B: Condensed Matter, 403(5-9), 766-768. https://doi.org/10.1016/j.physb.2007.10.028