De Haas-van Alphen effect in CeP

Y. Haga, A. Uesawa, T. Terashima, S. Uji, H. Aoki, Y. S. Kwon, T. Suzuki

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The Fermi surface of CeP was investigated by means of the de Haas-van Alphen (dHvA) effect. In addition to the branch observed in the Schubnikov-de Haas effect with a frequency of 190 T, a new one with a rather large frequency was discovered. From a comparison with CeSb, the angular dependence of the 190 T branch suggests that it arises from the ellipsoidal electron pocket. It is this branch which corresponds to the period of anomalous multi-step magnetization driven by Landau level crossing.

Original languageEnglish
Pages (from-to)792-794
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Issue numberC
Publication statusPublished - 1995 Feb 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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