D.C. electrical conductivity of amorphous Si3N4-C composites prepared by chemical vapour deposition

Takashi Goto, Toshio Hirai

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13 Citations (Scopus)


Amorphous Si3N4-C[Am.CVD-(Si3N4-C)] composites containing 0.07 to 6wt % carbon were prepared on a graphite substrate by chemical vapour deposition using SiCI4, H2, NH3 and C3H8 as the source gases. The d.c. electrical conductivities of the Am.CVD-(Si3N4-C) composites in the directions perpendicular (σ) and parallel (σ{norm of matrix}) to the substrate were measured. The variation of σ with temperature in the range 250 to 950° C, and also the difference between σ and σ{norm of matrix} at room temperature, were investigated. The σ of the Am.CVD-(Si3N4-C) composites containing 0.2 wt % or more carbon was 109 to 1010 times greater than that of amorphous CVD-Si3N4 at a temperature of about 500° C, and σ{norm of matrix} was 10 to 30 times greater than σ{norm of matrix} at room temperature. The activation energy for electrical conduction obtained from the measured temperature dependence of the σEτT for the electrically conductive Am.CVD-(Si3N4-C) composites was 0.02 to 0.06 eV. This result suggests that the electricity is conducted through a carbon network in the amorphous Si3N4 matrix.

Original languageEnglish
Pages (from-to)383-390
Number of pages8
JournalJournal of Materials Science
Issue number2
Publication statusPublished - 1983 Feb 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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