DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs

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4 Citations (Scopus)

Abstract

DC and low-frequency-noise characteristics of SiGe HBTs with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, were investigated. Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise, because mono-poly interfacial native oxides close to the intrinsic emitter-base junction are localized at the emitter periphery. The raised mono-Si emitter SiGe HBT with a scaled emitter exhibits low-frequency noise that is about ten times smaller than a conventional poly-Si emitter SiGe HBT.

Original languageEnglish
Pages (from-to)6-9
Number of pages4
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 2008 Nov 3
Externally publishedYes

Keywords

  • Bipolar transistor
  • Epitaxial growth
  • Heterojunction
  • High-frequency
  • Low-frequency noise
  • Phosphorous
  • Polysilicon
  • SiGe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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