DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs

Katsuyoshi Washio

doi:10.1016/j.tsf.2008.08.020

DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs

Katsuyoshi Washio

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

DC and low-frequency-noise characteristics of SiGe HBTs with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, were investigated. Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise, because mono-poly interfacial native oxides close to the intrinsic emitter-base junction are localized at the emitter periphery. The raised mono-Si emitter SiGe HBT with a scaled emitter exhibits low-frequency noise that is about ten times smaller than a conventional poly-Si emitter SiGe HBT.

Original language	English
Pages (from-to)	6-9
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.020
Publication status	Published - 2008 Nov 3
Externally published	Yes

Keywords

Bipolar transistor
Epitaxial growth
Heterojunction
High-frequency
Low-frequency noise
Phosphorous
Polysilicon
SiGe

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2008.08.020

Cite this

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title = "DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs",

abstract = "DC and low-frequency-noise characteristics of SiGe HBTs with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, were investigated. Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise, because mono-poly interfacial native oxides close to the intrinsic emitter-base junction are localized at the emitter periphery. The raised mono-Si emitter SiGe HBT with a scaled emitter exhibits low-frequency noise that is about ten times smaller than a conventional poly-Si emitter SiGe HBT.",

keywords = "Bipolar transistor, Epitaxial growth, Heterojunction, High-frequency, Low-frequency noise, Phosphorous, Polysilicon, SiGe",

author = "Katsuyoshi Washio",

note = "Funding Information: The author would like to express his sincere thanks to Mr. I. Suzumura of the Central Research Laboratory, Hitachi, Ltd. for his contribution to the development of the phosphorous-doped epitaxial-growth process. This work was partially supported by “The research and development project for expansion of radio spectrum resources” of the Ministry of Internal Affairs and Communications, Japan.",

year = "2008",

month = nov,

day = "3",

doi = "10.1016/j.tsf.2008.08.020",

language = "English",

volume = "517",

pages = "6--9",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1",

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TY - JOUR

T1 - DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs

AU - Washio, Katsuyoshi

N1 - Funding Information: The author would like to express his sincere thanks to Mr. I. Suzumura of the Central Research Laboratory, Hitachi, Ltd. for his contribution to the development of the phosphorous-doped epitaxial-growth process. This work was partially supported by “The research and development project for expansion of radio spectrum resources” of the Ministry of Internal Affairs and Communications, Japan.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - DC and low-frequency-noise characteristics of SiGe HBTs with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, were investigated. Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise, because mono-poly interfacial native oxides close to the intrinsic emitter-base junction are localized at the emitter periphery. The raised mono-Si emitter SiGe HBT with a scaled emitter exhibits low-frequency noise that is about ten times smaller than a conventional poly-Si emitter SiGe HBT.

AB - DC and low-frequency-noise characteristics of SiGe HBTs with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, were investigated. Experimental results indicate unexpected emitter-size dependencies of both base current and low-frequency noise, because mono-poly interfacial native oxides close to the intrinsic emitter-base junction are localized at the emitter periphery. The raised mono-Si emitter SiGe HBT with a scaled emitter exhibits low-frequency noise that is about ten times smaller than a conventional poly-Si emitter SiGe HBT.

KW - Bipolar transistor

KW - Epitaxial growth

KW - Heterojunction

KW - High-frequency

KW - Low-frequency noise

KW - Phosphorous

KW - Polysilicon

KW - SiGe

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U2 - 10.1016/j.tsf.2008.08.020

DO - 10.1016/j.tsf.2008.08.020

M3 - Article

AN - SCOPUS:54849425114

SN - 0040-6090

VL - 517

SP - 6

EP - 9

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs

Abstract

Keywords

ASJC Scopus subject areas

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