Damascene process compatibility of organic low k dielectrics

Yutaka Nomura; Fumihiko Ota; Ki Tae Park; Hiroyuki Kurino; Mitsumasa Koyanagi

Damascene process compatibility of organic low k dielectrics

Yutaka Nomura, Fumihiko Ota, Ki Tae Park, Hiroyuki Kurino, Mitsumasa Koyanagi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

An SiO ₂ deposition process, etching process, and CMP process were explored for two different organic low k dielectrics: the thermoplastic polymer PQ-600 and the thermosetting polymer SiLK Semiconductor Dielectric. From the results, it was confirmed that SiLK polymer has higher damascene process compatibility. This is because SiLK polymer has higher Tg and chemical resistance characteristics based on its thermosetting structure.

Original language	English
Pages (from-to)	659-664
Number of pages	6
Journal	Advanced Metallization Conference (AMC)
Publication status	Published - 2000 Dec 1
Event	Advanced Metallization Conference 2000 - San Diego, CA, United States Duration: 2000 Oct 2 → 2000 Oct 4

ASJC Scopus subject areas

Chemical Engineering(all)

Cite this

@article{c8a1056d276049bc9639474397467b68,

title = "Damascene process compatibility of organic low k dielectrics",

abstract = " An SiO 2 deposition process, etching process, and CMP process were explored for two different organic low k dielectrics: the thermoplastic polymer PQ-600 and the thermosetting polymer SiLK Semiconductor Dielectric. From the results, it was confirmed that SiLK polymer has higher damascene process compatibility. This is because SiLK polymer has higher Tg and chemical resistance characteristics based on its thermosetting structure. ",

author = "Yutaka Nomura and Fumihiko Ota and Park, {Ki Tae} and Hiroyuki Kurino and Mitsumasa Koyanagi",

year = "2000",

month = dec,

day = "1",

language = "English",

pages = "659--664",

journal = "Advanced Metallization Conference (AMC)",

issn = "1540-1766",

note = "Advanced Metallization Conference 2000 ; Conference date: 02-10-2000 Through 04-10-2000",

}

TY - JOUR

T1 - Damascene process compatibility of organic low k dielectrics

AU - Nomura, Yutaka

AU - Ota, Fumihiko

AU - Park, Ki Tae

AU - Kurino, Hiroyuki

AU - Koyanagi, Mitsumasa

PY - 2000/12/1

Y1 - 2000/12/1

N2 - An SiO 2 deposition process, etching process, and CMP process were explored for two different organic low k dielectrics: the thermoplastic polymer PQ-600 and the thermosetting polymer SiLK Semiconductor Dielectric. From the results, it was confirmed that SiLK polymer has higher damascene process compatibility. This is because SiLK polymer has higher Tg and chemical resistance characteristics based on its thermosetting structure.

AB - An SiO 2 deposition process, etching process, and CMP process were explored for two different organic low k dielectrics: the thermoplastic polymer PQ-600 and the thermosetting polymer SiLK Semiconductor Dielectric. From the results, it was confirmed that SiLK polymer has higher damascene process compatibility. This is because SiLK polymer has higher Tg and chemical resistance characteristics based on its thermosetting structure.

UR - http://www.scopus.com/inward/record.url?scp=0034460097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034460097&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034460097

SP - 659

EP - 664

JO - Advanced Metallization Conference (AMC)

JF - Advanced Metallization Conference (AMC)

SN - 1540-1766

T2 - Advanced Metallization Conference 2000

Y2 - 2 October 2000 through 4 October 2000

ER -

Damascene process compatibility of organic low k dielectrics

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this