Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication

Akira Wada; Koki Igarashi; Takeru Okada; Seiji Samukawa

doi:10.1109/NANO.2013.6720888

Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication

Akira Wada, Koki Igarashi, Takeru Okada, Seiji Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Graphene etching using oxygen neutral beam for high-quality graphene nanoribbon fabrication was investigated. A convenient index of D-band to G-band Raman intensity ratio showed that fewer defects on the edge of the graphene after neutral beam etching were observed than after plasma etching. The results demonstrate that damage-less graphene etching is possible by neutral beam etching due to suppression of UV photon radiation.

Original language	English
Title of host publication	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages	917-920
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2013.6720888
Publication status	Published - 2013
Event	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China Duration: 2013 Aug 5 → 2013 Aug 8

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Other

Other	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Country/Territory	China
City	Beijing
Period	13/8/5 → 13/8/8

Keywords

Graphene
defects
neutral beam etching

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1109/NANO.2013.6720888

Cite this

Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication. / Wada, Akira; Igarashi, Koki; Okada, Takeru et al.

2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 917-920 6720888 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wada, A, Igarashi, K, Okada, T & Samukawa, S 2013, Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication. in 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013., 6720888, Proceedings of the IEEE Conference on Nanotechnology, pp. 917-920, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013, Beijing, China, 13/8/5. https://doi.org/10.1109/NANO.2013.6720888

@inproceedings{02f15b5dbfac4350a048ef84ee1d0f2d,

title = "Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication",

abstract = "Graphene etching using oxygen neutral beam for high-quality graphene nanoribbon fabrication was investigated. A convenient index of D-band to G-band Raman intensity ratio showed that fewer defects on the edge of the graphene after neutral beam etching were observed than after plasma etching. The results demonstrate that damage-less graphene etching is possible by neutral beam etching due to suppression of UV photon radiation.",

keywords = "Graphene, defects, neutral beam etching",

author = "Akira Wada and Koki Igarashi and Takeru Okada and Seiji Samukawa",

year = "2013",

doi = "10.1109/NANO.2013.6720888",

language = "English",

isbn = "9781479906758",

series = "Proceedings of the IEEE Conference on Nanotechnology",

pages = "917--920",

booktitle = "2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013",

}

TY - GEN

T1 - Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication

AU - Wada, Akira

AU - Igarashi, Koki

AU - Okada, Takeru

AU - Samukawa, Seiji

PY - 2013

Y1 - 2013

N2 - Graphene etching using oxygen neutral beam for high-quality graphene nanoribbon fabrication was investigated. A convenient index of D-band to G-band Raman intensity ratio showed that fewer defects on the edge of the graphene after neutral beam etching were observed than after plasma etching. The results demonstrate that damage-less graphene etching is possible by neutral beam etching due to suppression of UV photon radiation.

AB - Graphene etching using oxygen neutral beam for high-quality graphene nanoribbon fabrication was investigated. A convenient index of D-band to G-band Raman intensity ratio showed that fewer defects on the edge of the graphene after neutral beam etching were observed than after plasma etching. The results demonstrate that damage-less graphene etching is possible by neutral beam etching due to suppression of UV photon radiation.

KW - Graphene

KW - defects

KW - neutral beam etching

UR - http://www.scopus.com/inward/record.url?scp=84894123240&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894123240&partnerID=8YFLogxK

U2 - 10.1109/NANO.2013.6720888

DO - 10.1109/NANO.2013.6720888

M3 - Conference contribution

AN - SCOPUS:84894123240

SN - 9781479906758

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 917

EP - 920

BT - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013

T2 - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013

Y2 - 5 August 2013 through 8 August 2013

ER -

Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this