Damage-less graphene etching by oxygen neutral beam for graphene nanoribbon fabrication

Akira Wada, Koki Igarashi, Takeru Okada, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Graphene etching using oxygen neutral beam for high-quality graphene nanoribbon fabrication was investigated. A convenient index of D-band to G-band Raman intensity ratio showed that fewer defects on the edge of the graphene after neutral beam etching were observed than after plasma etching. The results demonstrate that damage-less graphene etching is possible by neutral beam etching due to suppression of UV photon radiation.

Original languageEnglish
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages917-920
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 2013 Aug 5 → 2013 Aug 8

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period13/8/5 → 13/8/8

Keywords

  • Graphene
  • defects
  • neutral beam etching

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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