Damage-free ultradiluted HF/nitrogen jet spray cleaning for particle removal with minimal silicon and oxide loss

Hideki Hirano; Kou Sato; Tsutomu Osaka; Hitoshi Kuniyasu; Takeshi Hattori

doi:10.1149/1.2153857

Damage-free ultradiluted HF/nitrogen jet spray cleaning for particle removal with minimal silicon and oxide loss

Hideki Hirano, Kou Sato, Tsutomu Osaka, Hitoshi Kuniyasu, Takeshi Hattori

Research output: Contribution to journal › Article

25 Citations (Scopus)

Abstract

There has been a trade-off between efficient particle removal and damage minimization to fragile device structures when using mixed-liquid/gas jet spray cleaning of silicon wafers. We have developed an ultradiluted HF/nitrogen jet spray cleaning procedure for single-wafer spin-cleaning, which can efficiently remove particles on both silicon and silicon-dioxide surfaces even at a low nitrogen flow rate without causing damage to fragile 45-nm polysilicon gate structures in a short period. The use of ultradiluted HF can make silicon and oxide loss negligible, below 0.003 nm and 0.03 nm, respectively. This very simple single-step cleaning procedure drastically reduces chemical consumption.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	2
DOIs	https://doi.org/10.1149/1.2153857
Publication status	Published - 2006 Apr 10
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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Hirano, H., Sato, K., Osaka, T., Kuniyasu, H., & Hattori, T. (2006). Damage-free ultradiluted HF/nitrogen jet spray cleaning for particle removal with minimal silicon and oxide loss. Electrochemical and Solid-State Letters, 9(2). https://doi.org/10.1149/1.2153857

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