Abstract
There has been a trade-off between efficient particle removal and damage minimization to fragile device structures when using mixed-liquid/gas jet spray cleaning of silicon wafers. We have developed an ultradiluted HF/nitrogen jet spray cleaning procedure for single-wafer spin-cleaning, which can efficiently remove particles on both silicon and silicon-dioxide surfaces even at a low nitrogen flow rate without causing damage to fragile 45-nm polysilicon gate structures in a short period. The use of ultradiluted HF can make silicon and oxide loss negligible, below 0.003 nm and 0.03 nm, respectively. This very simple single-step cleaning procedure drastically reduces chemical consumption.
Original language | English |
---|---|
Journal | Electrochemical and Solid-State Letters |
Volume | 9 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2006 Apr 10 |
Externally published | Yes |
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering