Damage-free post-CMP cleaning solution for low-k fluorocarbon on advanced interconnects

Xun Gu, Takenao Nemoto, Akinobu Teramoto, Rui Hasebe, Takashi Ito, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

As technology node progressing, ultra low-k film has been implemented to reduce RC delay in LSI circuit. A fluorocarbon (CFx) film is proposed as foreground ultra low-k film because of non-porous structure [1]. Although CFx film is expected to be stable for its structure advantage, damage-less process is anticipated to avoid dielectric constants change in subsequence process steps [2]. CMP and post CMP process are concerned to bring damage on devices, so the effect of post CMP cleaning solutions on CFx structure and electric property is evaluated.

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces IX
Subtitle of host publicationUCPSS 2008
PublisherTrans Tech Publications Ltd
Pages381-384
Number of pages4
ISBN (Print)3908451647, 9783908451648
DOIs
Publication statusPublished - 2009
Event9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008 - Bruges, Belgium
Duration: 2008 Sep 222008 Sep 24

Publication series

NameSolid State Phenomena
Volume145-146
ISSN (Print)1012-0394

Other

Other9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008
CountryBelgium
CityBruges
Period08/9/2208/9/24

Keywords

  • Damage-free
  • Dielectric constant
  • Fluorocarbon
  • Post CMP cleaning solution
  • XPS

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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