Abstract
Our newly developed neutral beam (NB) etching accomplished the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-fins for the first time. The fabricated FinFETs realized higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the NB etched atomically-flat surface. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest |
| Pages | 840-843 |
| Number of pages | 4 |
| Publication status | Published - 2005 |
| Event | IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7 |
Publication series
| Name | Technical Digest - International Electron Devices Meeting, IEDM |
|---|---|
| Volume | 2005 |
| ISSN (Print) | 0163-1918 |
Other
| Other | IEEE International Electron Devices Meeting, 2005 IEDM |
|---|---|
| Country | United States |
| City | Washington, DC, MD |
| Period | 05/12/5 → 05/12/7 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Endo, K., Noda, S., Masahara, M., Kubota, T., Ozaki, T., Samukawa, S., Liu, Y., Ishii, K., Ishikawa, Y., Sugimata, E., Matsukawa, T., Takashima, H., Yamauchi, H., & Suzuki, E. (2005). Damage-free neutral beam etching technology for high mobility FinFETs. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 840-843). [1609487] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).