Damage-free neutral beam etching technology for high mobility FinFETs

Kazuhiko Endo, Shuichi Noda, Meishoku Masahara, Tomohiro Kubota, Takuya Ozaki, Seiji Samukawa, Yongxun Liu, Kenichi Ishii, Yuki Ishikawa, Etsuro Sugimata, Takashi Matsukawa, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Our newly developed neutral beam (NB) etching accomplished the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-fins for the first time. The fabricated FinFETs realized higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the NB etched atomically-flat surface. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages840-843
Number of pages4
Publication statusPublished - 2005
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 2005 Dec 52005 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period05/12/505/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Endo, K., Noda, S., Masahara, M., Kubota, T., Ozaki, T., Samukawa, S., Liu, Y., Ishii, K., Ishikawa, Y., Sugimata, E., Matsukawa, T., Takashima, H., Yamauchi, H., & Suzuki, E. (2005). Damage-free neutral beam etching technology for high mobility FinFETs. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 840-843). [1609487] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).