Damage-free neutral beam etching technology for high mobility FinFETs

Kazuhiko Endo; Shuichi Noda; Meishoku Masahara; Tomohiro Kubota; Takuya Ozaki; Seiji Samukawa; Yongxun Liu; Kenichi Ishii; Yuki Ishikawa; Etsuro Sugimata; Takashi Matsukawa; Hidenori Takashima; Hiromi Yamauchi; Eiichi Suzuki

Damage-free neutral beam etching technology for high mobility FinFETs

Kazuhiko Endo, Shuichi Noda, Meishoku Masahara, Tomohiro Kubota, Takuya Ozaki, Seiji Samukawa, Yongxun Liu, Kenichi Ishii, Yuki Ishikawa, Etsuro Sugimata, Takashi Matsukawa, Hidenori Takashima, Hiromi Yamauchi, Eiichi Suzuki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

Our newly developed neutral beam (NB) etching accomplished the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-fins for the first time. The fabricated FinFETs realized higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the NB etched atomically-flat surface. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	840-843
Number of pages	4
Publication status	Published - 2005
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	05/12/5 → 05/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Endo, K., Noda, S., Masahara, M., Kubota, T., Ozaki, T., Samukawa, S., Liu, Y., Ishii, K., Ishikawa, Y., Sugimata, E., Matsukawa, T., Takashima, H., Yamauchi, H., & Suzuki, E. (2005). Damage-free neutral beam etching technology for high mobility FinFETs. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 840-843). [1609487] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Damage-free neutral beam etching technology for high mobility FinFETs. / Endo, Kazuhiko; Noda, Shuichi; Masahara, Meishoku et al.

IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 840-843 1609487 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Endo, K, Noda, S, Masahara, M, Kubota, T, Ozaki, T, Samukawa, S, Liu, Y, Ishii, K, Ishikawa, Y, Sugimata, E, Matsukawa, T, Takashima, H, Yamauchi, H & Suzuki, E 2005, Damage-free neutral beam etching technology for high mobility FinFETs. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609487, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 840-843, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/5.

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abstract = "Our newly developed neutral beam (NB) etching accomplished the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-fins for the first time. The fabricated FinFETs realized higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the NB etched atomically-flat surface. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.",

author = "Kazuhiko Endo and Shuichi Noda and Meishoku Masahara and Tomohiro Kubota and Takuya Ozaki and Seiji Samukawa and Yongxun Liu and Kenichi Ishii and Yuki Ishikawa and Etsuro Sugimata and Takashi Matsukawa and Hidenori Takashima and Hiromi Yamauchi and Eiichi Suzuki",

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AU - Endo, Kazuhiko

AU - Noda, Shuichi

AU - Masahara, Meishoku

AU - Kubota, Tomohiro

AU - Ozaki, Takuya

AU - Samukawa, Seiji

AU - Liu, Yongxun

AU - Ishii, Kenichi

AU - Ishikawa, Yuki

AU - Sugimata, Etsuro

AU - Matsukawa, Takashi

AU - Takashima, Hidenori

AU - Yamauchi, Hiromi

AU - Suzuki, Eiichi

PY - 2005

Y1 - 2005

N2 - Our newly developed neutral beam (NB) etching accomplished the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-fins for the first time. The fabricated FinFETs realized higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the NB etched atomically-flat surface. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.

AB - Our newly developed neutral beam (NB) etching accomplished the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-fins for the first time. The fabricated FinFETs realized higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the NB etched atomically-flat surface. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 840

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BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

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ER -

Damage-free neutral beam etching technology for high mobility FinFETs

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