Damage-free microwave-excited plasma etching without carrier deactivation of heavily doped Si under thin silicide layer

Tetsuya Goto, Kazuyuki Ikenaga, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

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Physics & Astronomy

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Chemical Compounds