Damage-free contact etching using balanced electron drift magnetron etcher

Ryu Kaihara, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


A new plasma source called balanced electron drift (BED) magnetron plasma has been developed for SiO2 contact/via hole etching. E×B drift of electrons, which is notorious for degrading the uniformity of magnetron plasmas, has been completely balanced by applying appropriate 100 MHz rf power to the upper ring electrode. As a result, charge-up damage free and highly uniform etch rate of ±2.72% profiles were obtained on 200 mm wafer. Micro-loading effect free etching was also achieved by suppressing excess dissociation of C4F8. BED magnetron etcher has additional benefit of reducing dopant deactivation in the Si substrate because carbon-rich fluorocarbon film can protect Si surface from high-energy ion bombardment during over-etch period. Also, the addition of Xe has been confirmed to exhibit drastic suppression of the dopant deactivation even at p+Si surface, which results in low contact resistance without additional ion implantation after contact etch. BED magnetron etcher using Xe gas can reduce a few tens of process steps after contact etch.

Original languageEnglish
Title of host publicationIEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
Number of pages4
Publication statusPublished - 2000 Dec 1
Event9th International Symposium on Semiconductor Manufacturing - Tokyo, Japan
Duration: 2000 Sep 262000 Sep 28


Other9th International Symposium on Semiconductor Manufacturing


  • Balanced Electron Drift (BED)
  • Damage-free Etching
  • E×B drift
  • Ion Reactive Etching (RIE)

ASJC Scopus subject areas

  • Engineering(all)


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