Damage caused by stored charge during ecr plasma etching

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The influence of stored charge caused by changing the plasma parameter can be accurately shown by measuring the leakage current in CMOS-inverter integrated circuits. The leakage current increase is due to nonuniform ion current density distribution and self-bias voltage at the point of ECR plasma discharge turn-off. Positive charge ions are stored by the ion current density difference on a wafer. Moreover, a large voltage across the gate oxide is generated by the self-bias voltage at the point of ECR plasma discharge turn-off, and finally degrades the gate oxide.

Original languageEnglish
Pages (from-to)980-985
Number of pages6
JournalJapanese journal of applied physics
Volume29
Issue number5 R
DOIs
Publication statusPublished - 1990 May
Externally publishedYes

Keywords

  • Damage
  • ECR plasma
  • Ion current density
  • Self-bias voltage
  • Stored charge

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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