Damage and contamination free fabrication of thin Si wires with highly controlled feature size

Takahiro Shinada, Hiroaki Kimura, Yoshinori Kumura, Iwao Ohdomari

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

For the precise control of the electrical conductivity in Si ultrafine structures by single ion implantation (SII), silicon wires with well-defined patterns have been successfully fabricated without introducing damages and contaminations by combining a focused Si ion beam irradiation with the anisotropic etching of Si crystal in a hydrazine-water solution. A silicon ion beam irradiation enhanced the etching rate of the thermally grown SiO 2 overlayer on SIMOX (separation by implanted oxygen) Si in HF-water solution. The top-Si was subsequently etched by the hydrazine-water solution with the patterned SiO 2 film as a mask. It was confirmed by the four point probe measurement that our technique had no influence on the electrical properties of the Si wires.

Original languageEnglish
Pages (from-to)684-689
Number of pages6
JournalApplied Surface Science
Volume117-118
DOIs
Publication statusPublished - 1997 Jun 2
Externally publishedYes

Keywords

  • Anisotropic etching
  • FIB
  • Hydrazine
  • SIMOX
  • Single ion implantation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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