Abstract
For the precise control of the electrical conductivity in Si ultrafine structures by single ion implantation (SII), silicon wires with well-defined patterns have been successfully fabricated without introducing damages and contaminations by combining a focused Si ion beam irradiation with the anisotropic etching of Si crystal in a hydrazine-water solution. A silicon ion beam irradiation enhanced the etching rate of the thermally grown SiO 2 overlayer on SIMOX (separation by implanted oxygen) Si in HF-water solution. The top-Si was subsequently etched by the hydrazine-water solution with the patterned SiO 2 film as a mask. It was confirmed by the four point probe measurement that our technique had no influence on the electrical properties of the Si wires.
Original language | English |
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Pages (from-to) | 684-689 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 117-118 |
DOIs | |
Publication status | Published - 1997 Jun 2 |
Externally published | Yes |
Keywords
- Anisotropic etching
- FIB
- Hydrazine
- SIMOX
- Single ion implantation
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films