D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65-nm CMOS technology

Uroschanit Yodprasit; Ryuichi Fujimoto; Mizuki Motoyoshi; Kyoya Takano; Minoru Fujishima

D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65-nm CMOS technology

Uroschanit Yodprasit, Ryuichi Fujimoto, Mizuki Motoyoshi, Kyoya Takano, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A compact and low-insertion-loss amplitude-shifted keying (ASK) modulator suitable for operations in D-band (110 GHz 170 GHz) has been designed and successfully integrated with a 65-nm CMOS technology. The structure of the modulator is a transmission-line type single-pole-single-throw (SPST) switch. To minimize the insertion loss, a single section of a transmission line is used with two shunt transistors. The modulator exhibits an insertion loss of lower than 3.6 dB, measured without de-embedding, and an isolation of higher than 19.5 dB in the D band. The transient behavior of the modulator has been characterized by using a pulse generator, revealing an operation suitable for over-1Gbps applications.

Original language	English
Title of host publication	2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Pages	1853-1856
Number of pages	4
Publication status	Published - 2010 Dec 1
Externally published	Yes
Event	2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan Duration: 2010 Dec 7 → 2010 Dec 10

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC

Other

Other	2010 Asia-Pacific Microwave Conference, APMC 2010
Country/Territory	Japan
City	Yokohama
Period	10/12/7 → 10/12/10

Keywords

ASK modulation
ASK modulator
SPST switch
millimeter-wave application
transceiver
transmitter

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65-nm CMOS technology. / Yodprasit, Uroschanit; Fujimoto, Ryuichi; Motoyoshi, Mizuki; Takano, Kyoya; Fujishima, Minoru.

2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010. 2010. p. 1853-1856 5728329 (Asia-Pacific Microwave Conference Proceedings, APMC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yodprasit, U, Fujimoto, R, Motoyoshi, M, Takano, K & Fujishima, M 2010, D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65-nm CMOS technology. in 2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010., 5728329, Asia-Pacific Microwave Conference Proceedings, APMC, pp. 1853-1856, 2010 Asia-Pacific Microwave Conference, APMC 2010, Yokohama, Japan, 10/12/7.

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abstract = "A compact and low-insertion-loss amplitude-shifted keying (ASK) modulator suitable for operations in D-band (110 GHz 170 GHz) has been designed and successfully integrated with a 65-nm CMOS technology. The structure of the modulator is a transmission-line type single-pole-single-throw (SPST) switch. To minimize the insertion loss, a single section of a transmission line is used with two shunt transistors. The modulator exhibits an insertion loss of lower than 3.6 dB, measured without de-embedding, and an isolation of higher than 19.5 dB in the D band. The transient behavior of the modulator has been characterized by using a pulse generator, revealing an operation suitable for over-1Gbps applications.",

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AU - Takano, Kyoya

AU - Fujishima, Minoru

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N2 - A compact and low-insertion-loss amplitude-shifted keying (ASK) modulator suitable for operations in D-band (110 GHz 170 GHz) has been designed and successfully integrated with a 65-nm CMOS technology. The structure of the modulator is a transmission-line type single-pole-single-throw (SPST) switch. To minimize the insertion loss, a single section of a transmission line is used with two shunt transistors. The modulator exhibits an insertion loss of lower than 3.6 dB, measured without de-embedding, and an isolation of higher than 19.5 dB in the D band. The transient behavior of the modulator has been characterized by using a pulse generator, revealing an operation suitable for over-1Gbps applications.

AB - A compact and low-insertion-loss amplitude-shifted keying (ASK) modulator suitable for operations in D-band (110 GHz 170 GHz) has been designed and successfully integrated with a 65-nm CMOS technology. The structure of the modulator is a transmission-line type single-pole-single-throw (SPST) switch. To minimize the insertion loss, a single section of a transmission line is used with two shunt transistors. The modulator exhibits an insertion loss of lower than 3.6 dB, measured without de-embedding, and an isolation of higher than 19.5 dB in the D band. The transient behavior of the modulator has been characterized by using a pulse generator, revealing an operation suitable for over-1Gbps applications.

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D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65-nm CMOS technology

Abstract

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Keywords

ASJC Scopus subject areas

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