D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65-nm CMOS technology

Uroschanit Yodprasit, Ryuichi Fujimoto, Mizuki Motoyoshi, Kyoya Takano, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)


A compact and low-insertion-loss amplitude-shifted keying (ASK) modulator suitable for operations in D-band (110 GHz 170 GHz) has been designed and successfully integrated with a 65-nm CMOS technology. The structure of the modulator is a transmission-line type single-pole-single-throw (SPST) switch. To minimize the insertion loss, a single section of a transmission line is used with two shunt transistors. The modulator exhibits an insertion loss of lower than 3.6 dB, measured without de-embedding, and an isolation of higher than 19.5 dB in the D band. The transient behavior of the modulator has been characterized by using a pulse generator, revealing an operation suitable for over-1Gbps applications.

Original languageEnglish
Title of host publication2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
Number of pages4
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
Duration: 2010 Dec 72010 Dec 10

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC


Other2010 Asia-Pacific Microwave Conference, APMC 2010


  • ASK modulation
  • ASK modulator
  • SPST switch
  • millimeter-wave application
  • transceiver
  • transmitter

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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