Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B 2O 3

Toshinori Taishi, Yoshio Hashimoto, Hideaki Ise, Yu Murao, Takayuki Ohsawa, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B 2O 3) and a silica crucible. When a Ge melt is partially covered with liquid B 2O 3, but only on the outer region of the melt surface, germanium-oxide (GeO 2)-related particles forming naturally in the melt are effectively dissolved by the liquid B 2O 3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6×10 17 cm -3 can be grown from a melt fully covered by liquid B 2O 3 with added GeO 2 powder. The reaction and transportation of oxygen atoms during the growth process using B 2O 3 was investigated, revealing that liquid B 2O 3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms.

Original languageEnglish
Pages (from-to)47-51
Number of pages5
JournalJournal of Crystal Growth
Volume360
Issue number1
DOIs
Publication statusPublished - 2012 Dec 1

Keywords

  • A1. Doping
  • A1. Impurities
  • A2. Czochralski method
  • B2. Semiconducting germanium

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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