Czochralski growth of heavily tin-doped Si crystals

I. Yonenaga, T. Taishi, K. Inoue, R. Gotoh, K. Kutsukake, Y. Tokumoto, Y. Ohno

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Heavily tin (Sn)-doped Si crystals in a concentration up to 4×10 19 cm-3 were grown by the Czochralski method. Variation of Sn concentration in the crystals was well expressed by the Pfann equation using a segregation coefficient of k=0.016. From the occurrence of growth interface instability and the appearance of Sn precipitates in the grown crystals, the solubility limit of Sn was considered to be around 5×1019 cm-3. Interstitially dissolved oxygen Oi was presented at a concentration of 8-9×1017 cm-3 in the grown Sn-doped crystals. The FT-IR absorption peak relating to a Si-Oi-Si quasi-molecule at 1106 cm-1 showed preferential occupation of O i at the bond-centered position of Si-Si. The Oi peak shifted to the lower wave number side with increasing Sn concentration in Si, implying expansion of the Si-Si bond.

Original languageEnglish
Pages (from-to)94-97
Number of pages4
JournalJournal of Crystal Growth
Volume395
DOIs
Publication statusPublished - 2014 Jun 1

Keywords

  • A1. Doping
  • A1. Impurities
  • A1. Segregation
  • A1. Solubility
  • A2. Czochralski method
  • B2. Semiconducting silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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