Czochralski growth of heavily impurity doped crystals of GeSi alloys

I. Yonenaga

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

Heavily impurity (boron, gallium, phosphorus) doped single crystals of Si-rich Ge1-xSix alloys with the composition 0.80 < x < 1 were grown by the Czochralski method. Full single crystals of diameter and length more than 25 and 40mm, respectively, were obtained with variable composition 0.85 < x < 1 along the growth direction. By X-ray topography, grown-in dislocations were observed to be generated from the seed/crystal interface and from the crystal periphery. The distribution coefficient of boron impurity in the Si-rich GeSi alloys was evaluated.

Original languageEnglish
Pages (from-to)47-51
Number of pages5
JournalJournal of Crystal Growth
Volume226
Issue number1
DOIs
Publication statusPublished - 2001 Jun 1

Keywords

  • A2. Czochralski method
  • A2. Single crystal growth
  • B1. Alloys
  • B2. Semiconducting silicon compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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