Czochralski growth of Ge1 - xSix alloy crystals

I. Yonenaga; A. Matsui; S. Tozawa; K. Sumino; T. Fukuda

doi:10.1016/0022-0248(95)00186-7

Czochralski growth of Ge_{1 - x}Si_x alloy crystals

I. Yonenaga, A. Matsui, S. Tozawa, K. Sumino, T. Fukuda

Materials Design Division

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

Single crystal Ge_{1 - x}Si_x alloys of composition 0 < x < 0.64 were grown by the Czochralski method. In particular, a single crystal 20 mm in diameter and 60 mm in length with variable composition 0.004 < x < 0.03 along the growth direction, and a crystal 12 mm in diameter and 20 mm in length with composition 0.21 < x < 0.25 were obtained. The crystals became Ge rich along the growth direction as determined by energy dispersive X-ray (EDX) spectroscopy. Fine striation structures in the crystals were observed by X-ray topography.

Original language	English
Pages (from-to)	275-279
Number of pages	5
Journal	Journal of Crystal Growth
Volume	154
Issue number	3-4
DOIs	https://doi.org/10.1016/0022-0248(95)00186-7
Publication status	Published - 1995 Sep 2

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(95)00186-7

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abstract = "Single crystal Ge1 - xSix alloys of composition 0 < x < 0.64 were grown by the Czochralski method. In particular, a single crystal 20 mm in diameter and 60 mm in length with variable composition 0.004 < x < 0.03 along the growth direction, and a crystal 12 mm in diameter and 20 mm in length with composition 0.21 < x < 0.25 were obtained. The crystals became Ge rich along the growth direction as determined by energy dispersive X-ray (EDX) spectroscopy. Fine striation structures in the crystals were observed by X-ray topography.",

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AU - Yonenaga, I.

AU - Matsui, A.

AU - Tozawa, S.

AU - Sumino, K.

AU - Fukuda, T.

PY - 1995/9/2

Y1 - 1995/9/2

N2 - Single crystal Ge1 - xSix alloys of composition 0 < x < 0.64 were grown by the Czochralski method. In particular, a single crystal 20 mm in diameter and 60 mm in length with variable composition 0.004 < x < 0.03 along the growth direction, and a crystal 12 mm in diameter and 20 mm in length with composition 0.21 < x < 0.25 were obtained. The crystals became Ge rich along the growth direction as determined by energy dispersive X-ray (EDX) spectroscopy. Fine striation structures in the crystals were observed by X-ray topography.

AB - Single crystal Ge1 - xSix alloys of composition 0 < x < 0.64 were grown by the Czochralski method. In particular, a single crystal 20 mm in diameter and 60 mm in length with variable composition 0.004 < x < 0.03 along the growth direction, and a crystal 12 mm in diameter and 20 mm in length with composition 0.21 < x < 0.25 were obtained. The crystals became Ge rich along the growth direction as determined by energy dispersive X-ray (EDX) spectroscopy. Fine striation structures in the crystals were observed by X-ray topography.

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Czochralski growth of Ge_{1 - x}Si_x alloy crystals

Abstract

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