Czochralski growth of GeSi bulk alloy crystals

I. Yonenaga

doi:10.1016/S0022-0248(98)00992-0

Czochralski growth of GeSi bulk alloy crystals

I. Yonenaga

Materials Design Division

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Bulk crystals of Ge_1-xSi_x alloys of the composition range 0 < x < 1 were grown by the Czochralski method with the pulling rate 0.5-8 mm/h. Fully grown single crystals of large size were obtained with composition x < 0.15 and x > 0.85. Crystals with intermediate composition changed to polycrystalline due to the constitutional supercooling. The heteroseeding process by using an Si or Ge crystal was investigated in terms of solute segregation. By infra-red spectroscopy, a large number of oxygen atoms were deduced to be included in the grown alloys. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy are discussed.

Original language	English
Pages (from-to)	404-408
Number of pages	5
Journal	Journal of Crystal Growth
Volume	198-199
Issue number	PART I
DOIs	https://doi.org/10.1016/S0022-0248(98)00992-0
Publication status	Published - 1999 Jan 1

Keywords

Czochralski growth
GeSi
Gravity effect
Hetero-seeding
Solute segregation

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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abstract = "Bulk crystals of Ge1-xSix alloys of the composition range 0 < x < 1 were grown by the Czochralski method with the pulling rate 0.5-8 mm/h. Fully grown single crystals of large size were obtained with composition x < 0.15 and x > 0.85. Crystals with intermediate composition changed to polycrystalline due to the constitutional supercooling. The heteroseeding process by using an Si or Ge crystal was investigated in terms of solute segregation. By infra-red spectroscopy, a large number of oxygen atoms were deduced to be included in the grown alloys. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy are discussed.",

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AB - Bulk crystals of Ge1-xSix alloys of the composition range 0 < x < 1 were grown by the Czochralski method with the pulling rate 0.5-8 mm/h. Fully grown single crystals of large size were obtained with composition x < 0.15 and x > 0.85. Crystals with intermediate composition changed to polycrystalline due to the constitutional supercooling. The heteroseeding process by using an Si or Ge crystal was investigated in terms of solute segregation. By infra-red spectroscopy, a large number of oxygen atoms were deduced to be included in the grown alloys. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy are discussed.

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KW - Gravity effect

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KW - Solute segregation

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