Czochralski growth of GeSi bulk alloy crystals

I. Yonenaga

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


Bulk crystals of Ge1-xSix alloys of the composition range 0 < x < 1 were grown by the Czochralski method with the pulling rate 0.5-8 mm/h. Fully grown single crystals of large size were obtained with composition x < 0.15 and x > 0.85. Crystals with intermediate composition changed to polycrystalline due to the constitutional supercooling. The heteroseeding process by using an Si or Ge crystal was investigated in terms of solute segregation. By infra-red spectroscopy, a large number of oxygen atoms were deduced to be included in the grown alloys. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy are discussed.

Original languageEnglish
Pages (from-to)404-408
Number of pages5
JournalJournal of Crystal Growth
Issue numberPART I
Publication statusPublished - 1999


  • Czochralski growth
  • GeSi
  • Gravity effect
  • Hetero-seeding
  • Solute segregation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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