Czochralski growth of bulk crystals of Ge1-xSix alloys II. Si-rich alloys

I. Yonenaga; M. Nonaka

doi:10.1016/S0022-0248(98)00133-X

Czochralski growth of bulk crystals of Ge_1-xSi_x alloys II. Si-rich alloys

I. Yonenaga, M. Nonaka

Materials Design Division

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Bulk single crystals of Si-rich Ge_1-xSi_x alloys of composition 0.86 < x < 1 were grown by the Czochralski method. Full single crystals of diameter and of length more than 20 and 50 mm, respectively, were obtained in variable composition 0.88 < x < 0.98 along the growth direction. The composition of the grown crystal was determined by means of energy dispersive X-ray (EDX) spectroscopy. By infrared spectroscopy, a large number of oxygen atoms are found to be included in the grown alloys. By X-ray topography, grown-in dislocations of Lomer type were observed to generate from the crystal habits. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy were discussed.

Original language	English
Pages (from-to)	393-398
Number of pages	6
Journal	Journal of Crystal Growth
Volume	191
Issue number	3
DOIs	https://doi.org/10.1016/S0022-0248(98)00133-X
Publication status	Published - 1998 Jul 15

Keywords

Czochralski growth
GeSi
Grown-in defects
Oxygen impurity
Solute segregation

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(98)00133-X

Cite this

@article{d9eb7908a1fb4388b0436dcee4d1300e,

title = "Czochralski growth of bulk crystals of Ge1-xSix alloys II. Si-rich alloys",

abstract = "Bulk single crystals of Si-rich Ge1-xSix alloys of composition 0.86 < x < 1 were grown by the Czochralski method. Full single crystals of diameter and of length more than 20 and 50 mm, respectively, were obtained in variable composition 0.88 < x < 0.98 along the growth direction. The composition of the grown crystal was determined by means of energy dispersive X-ray (EDX) spectroscopy. By infrared spectroscopy, a large number of oxygen atoms are found to be included in the grown alloys. By X-ray topography, grown-in dislocations of Lomer type were observed to generate from the crystal habits. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy were discussed.",

keywords = "Czochralski growth, GeSi, Grown-in defects, Oxygen impurity, Solute segregation",

author = "I. Yonenaga and M. Nonaka",

year = "1998",

month = jul,

day = "15",

doi = "10.1016/S0022-0248(98)00133-X",

language = "English",

volume = "191",

pages = "393--398",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Czochralski growth of bulk crystals of Ge1-xSix alloys II. Si-rich alloys

AU - Yonenaga, I.

AU - Nonaka, M.

PY - 1998/7/15

Y1 - 1998/7/15

N2 - Bulk single crystals of Si-rich Ge1-xSix alloys of composition 0.86 < x < 1 were grown by the Czochralski method. Full single crystals of diameter and of length more than 20 and 50 mm, respectively, were obtained in variable composition 0.88 < x < 0.98 along the growth direction. The composition of the grown crystal was determined by means of energy dispersive X-ray (EDX) spectroscopy. By infrared spectroscopy, a large number of oxygen atoms are found to be included in the grown alloys. By X-ray topography, grown-in dislocations of Lomer type were observed to generate from the crystal habits. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy were discussed.

AB - Bulk single crystals of Si-rich Ge1-xSix alloys of composition 0.86 < x < 1 were grown by the Czochralski method. Full single crystals of diameter and of length more than 20 and 50 mm, respectively, were obtained in variable composition 0.88 < x < 0.98 along the growth direction. The composition of the grown crystal was determined by means of energy dispersive X-ray (EDX) spectroscopy. By infrared spectroscopy, a large number of oxygen atoms are found to be included in the grown alloys. By X-ray topography, grown-in dislocations of Lomer type were observed to generate from the crystal habits. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy were discussed.

KW - Czochralski growth

KW - GeSi

KW - Grown-in defects

KW - Oxygen impurity

KW - Solute segregation

UR - http://www.scopus.com/inward/record.url?scp=0032118823&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032118823&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)00133-X

DO - 10.1016/S0022-0248(98)00133-X

M3 - Article

AN - SCOPUS:0032118823

VL - 191

SP - 393

EP - 398

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3

ER -