Czochralski growth of bulk crystals of Ge1-xSix alloys II. Si-rich alloys

I. Yonenaga, M. Nonaka

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38 Citations (Scopus)

Abstract

Bulk single crystals of Si-rich Ge1-xSix alloys of composition 0.86 < x < 1 were grown by the Czochralski method. Full single crystals of diameter and of length more than 20 and 50 mm, respectively, were obtained in variable composition 0.88 < x < 0.98 along the growth direction. The composition of the grown crystal was determined by means of energy dispersive X-ray (EDX) spectroscopy. By infrared spectroscopy, a large number of oxygen atoms are found to be included in the grown alloys. By X-ray topography, grown-in dislocations of Lomer type were observed to generate from the crystal habits. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy were discussed.

Original languageEnglish
Pages (from-to)393-398
Number of pages6
JournalJournal of Crystal Growth
Volume191
Issue number3
DOIs
Publication statusPublished - 1998 Jul 15

Keywords

  • Czochralski growth
  • GeSi
  • Grown-in defects
  • Oxygen impurity
  • Solute segregation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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