Abstract
Bulk single crystals of Si-rich Ge1-xSix alloys of composition 0.86 < x < 1 were grown by the Czochralski method. Full single crystals of diameter and of length more than 20 and 50 mm, respectively, were obtained in variable composition 0.88 < x < 0.98 along the growth direction. The composition of the grown crystal was determined by means of energy dispersive X-ray (EDX) spectroscopy. By infrared spectroscopy, a large number of oxygen atoms are found to be included in the grown alloys. By X-ray topography, grown-in dislocations of Lomer type were observed to generate from the crystal habits. The velocity for single crystal growth and the distribution coefficient in the whole composition range of GeSi alloy were discussed.
Original language | English |
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Pages (from-to) | 393-398 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 191 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1998 Jul 15 |
Keywords
- Czochralski growth
- GeSi
- Grown-in defects
- Oxygen impurity
- Solute segregation
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry