Czochralski growth of bulk crystals of Ge1 - XSix alloys

A. Matsui, I. Yonenaga, K. Sumino

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56 Citations (Scopus)

Abstract

Bulk crystals of Ge1 - xSix alloys in the composition range of 0 < x < 0.89 were grown by the Czochralski method. Fully or partly grown single crystals were obtained, depending on the melt composition. The compositions of grown crystals were determined by means of energy dispersive X-ray (EDX) spectroscopy and grown-in defects were observed by etch pit and X-ray topographic techniques. The variations of the compositions along the growth direction in the crystals were discussed. The gravity effect in the melt caused by a large difference in the densities of Ge and Si was deduced.

Original languageEnglish
Pages (from-to)109-116
Number of pages8
JournalJournal of Crystal Growth
Volume183
Issue number1-2
DOIs
Publication statusPublished - 1998 Jan

Keywords

  • Alloy semiconductor
  • Czochralski growth
  • Gesi
  • Gravity effect
  • Solute segregation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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