Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal; Relationship between Al, Ga site occupancy and scintillation properties

Kei Kamada, Shunsuke Kurosawa, Petr Prusa, Martin Nikl, Vladimir V. Kochurikhin, Takanori Endo, Kousuke Tsutumi, Hiroki Sato, Yuui Yokota, Kazumasa Sugiyama, Akira Yoshikawa

Research output: Contribution to journalArticlepeer-review

93 Citations (Scopus)

Abstract

2-in. size Ce 1%:Gd3(Al1- xGax)5O12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 keV. The dependence of scintillation properties on crystal structure and Al-Ga was discussed.

Original languageEnglish
Pages (from-to)1942-1945
Number of pages4
JournalOptical Materials
Volume36
Issue number12
DOIs
Publication statusPublished - 2014 Oct

Keywords

  • Scintillator
  • Single crystal growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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