CVD Si1-xGex epitaxial growth its application to MOS devices

Junichi Murota, Masao Sakuraba, Takashi Matsuura

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high quality Si1-xGex epitaxial growth on Si(100) is achieved. In order to prevent island growth and generation of misfit dislocations in the heterostructure, relatively low deposition temperatures and optimization of the layer thickness are inevitable for the high Ge fractions. Atomically flat surfaces and interfaces for the Si/Si1-xGex/Si heterostructures containing Si0.8Ge0.2, Si0.5Ge0.5 and Si0.3GE0.7 layers are obtained by deposition at 550, 500 and 450°C, respectively. It is also found that the Si0.5Ge0.5-channel pMOSFET has the highest peak field-effect mobility. The deposition rate, the Ge fraction and the in-situ doping characteristics with the B2H6 and PH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFET's have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions.

Original languageEnglish
Pages (from-to)33-45
Number of pages13
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3881
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 Microelectronic Device Technology III - Santa Clara, CA, USA
Duration: 1999 Sep 221999 Sep 23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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