CVD SiGe(C) epitaxial growth and its application to MOS devices

J. Murota, M. Sakuraba, T. Matsuura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

By ultraclean low-pressure CVD using SiH4 and GeH4 gases, epitaxial growth of Si/Si1-xGex/Si heterostructures with atomically flat surfaces and interfaces on Si[100] is achieved. The deposition rate, the Ge fraction and the in-situ doping characteristics with the PH3, B2H6, or SiH3CH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions.

Original languageEnglish
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
EditorsHiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages525-530
Number of pages6
ISBN (Electronic)0780365208, 9780780365209
DOIs
Publication statusPublished - 2001 Jan 1
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: 2001 Oct 222001 Oct 25

Publication series

Name2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume1

Other

Other6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
CountryChina
CityShanghai
Period01/10/2201/10/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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