Current-voltage characteristics across small angle symmetric tilt boundaries in Nb-doped SrTio3 bicrystals

Takahisa Yamamoto, Fumiyasu Oba, Yuichi Ikuhara, Taketo Sakuma

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    Grain boundary structure and current-voltage (I-V) characteristics were investigated for Nb-doped SrTiO3 bicrystals having small angle tilt boundaries with misorientation angles of 2° and 4° against [001]. The bicrystals were fabricated by using hot-joining technique at 1400°C for 10 h under a pressure of 0.4 MPa. High resolution transmission electron microscopy study revealed that the joined boundaries are free from any secondary phases such as amorphous phases even on an atomic scale. The structures of the two boundaries are composed of edge type dislocations whose Burgers vector is [010]. But the density of boundary dislocations differs between the two boundaries. They exist at an interval of 10 nm in the 2°-boundary and 5.2 nm in the 4°-boundary. On the other hand, it was found that non-linearity in I-V relation across the boundary increases with an increase in the misorientation angle. This result clearly indicates that the potential barrier height is closely related to the density of boundary dislocations in the case of small angle type boundaries.

    Original languageEnglish
    Pages (from-to)1537-1541
    Number of pages5
    JournalMaterials Transactions
    Volume43
    Issue number7
    DOIs
    Publication statusPublished - 2002 Jul

    Keywords

    • Bicrystal
    • Current-voltage (I-V) characteristic
    • Double Schottky barrier
    • Grain boundary structure
    • HRTEM
    • SrTiO

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Fingerprint Dive into the research topics of 'Current-voltage characteristics across small angle symmetric tilt boundaries in Nb-doped SrTio<sub>3</sub> bicrystals'. Together they form a unique fingerprint.

    Cite this