Current status of single ion implantation

Takahiro Shinada, Yoshinori Kumura, Jun Okabe, Takashi Matsukawa, Iwao Ohdomari

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

The current status of single ion implantation (SII) which has been proposed as a novel technology to suppress the fluctuation in dopant number in fine semiconductor structures is reported. The key to control the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. By improving the SE detection system, we have achieved the efficiency of 90% which ensures the reduction in the fluctuation of dopant number to 30% compared to the conventional ion implantation. The improvement for the better SE detection efficiency has turned out to also be effective for the precise beam alignment. The single ion incident position can now be successfully controlled with an error of less than 0.3 μm.

Original languageEnglish
Pages (from-to)2489-2493
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
DOIs
Publication statusPublished - 1998
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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