Abstract
We study how the dc transport through a semiconductor quantum dot varies when time-dependent external fields are applied. We find (i) the shift of the Coulomb blockade region due to the interband excitation, (ii) the resonant peak structures of the Coulomb oscillation due to the intraband excitation, and (iii) the electron pumping effect in the quantum dot modulated by the microwave field with frequency lower than the level spacing of the quantum dot.
| Original language | English |
|---|---|
| Pages (from-to) | 4298-4301 |
| Number of pages | 4 |
| Journal | Japanese journal of applied physics |
| Volume | 34 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1995 Aug |
| Externally published | Yes |
Keywords
- Current continuity
- Electron pumping
- Interband excitation
- Intraband excitation
- Low-frequency modulation
- Quantum dot
- Shift of Coulomb blockade
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)