TY - JOUR
T1 - Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co2Fe0.4Mn0.6Si Heusler alloy electrodes
AU - Narisawa, Hiroyuki
AU - Kubota, Takahide
AU - Takanashi, Koki
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - The current perpendicular to film plane type giant magnetoresistance (CPP-GMR) effect in Co2Fe0.4Mn0.6Si/Ag83Mg17/Co2Fe0.4Mn0.6Si junctions was investigated. An epitaxially grown 5-nm-thick Ag83Mg17 film having partially ordered L12 structure was fabricated on the Co2Fe0.4Mn0.6Si layer by magnetron sputtering. CPP-GMR effects were observed in the submicrometer-sized junctions, and the maximum value of the observed (intrinsic) MR ratio was 40% (48%) at room temperature. The average change in the resistance-area product was 23mO&μm2 for the Ag-Mg junctions, which was higher than those of conventional CPP-GMR junctions using a Ag spacer layer.
AB - The current perpendicular to film plane type giant magnetoresistance (CPP-GMR) effect in Co2Fe0.4Mn0.6Si/Ag83Mg17/Co2Fe0.4Mn0.6Si junctions was investigated. An epitaxially grown 5-nm-thick Ag83Mg17 film having partially ordered L12 structure was fabricated on the Co2Fe0.4Mn0.6Si layer by magnetron sputtering. CPP-GMR effects were observed in the submicrometer-sized junctions, and the maximum value of the observed (intrinsic) MR ratio was 40% (48%) at room temperature. The average change in the resistance-area product was 23mO&μm2 for the Ag-Mg junctions, which was higher than those of conventional CPP-GMR junctions using a Ag spacer layer.
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U2 - 10.7567/APEX.8.063008
DO - 10.7567/APEX.8.063008
M3 - Article
AN - SCOPUS:84930749385
VL - 8
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 6
M1 - 063008
ER -