Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co2Fe0.4Mn0.6Si Heusler alloy electrodes

Hiroyuki Narisawa; Takahide Kubota; Koki Takanashi

doi:10.7567/APEX.8.063008

Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co₂Fe_0.4Mn_0.6Si Heusler alloy electrodes

Hiroyuki Narisawa, Takahide Kubota, Koki Takanashi

Materials Development Division

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The current perpendicular to film plane type giant magnetoresistance (CPP-GMR) effect in Co₂Fe_0.4Mn_0.6Si/Ag₈₃Mg₁₇/Co₂Fe_0.4Mn_0.6Si junctions was investigated. An epitaxially grown 5-nm-thick Ag₈₃Mg₁₇ film having partially ordered L1₂ structure was fabricated on the Co₂Fe_0.4Mn_0.6Si layer by magnetron sputtering. CPP-GMR effects were observed in the submicrometer-sized junctions, and the maximum value of the observed (intrinsic) MR ratio was 40% (48%) at room temperature. The average change in the resistance-area product was 23mO&μm2 for the Ag-Mg junctions, which was higher than those of conventional CPP-GMR junctions using a Ag spacer layer.

Original language	English
Article number	063008
Journal	Applied Physics Express
Volume	8
Issue number	6
DOIs	https://doi.org/10.7567/APEX.8.063008
Publication status	Published - 2015 Jun 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/APEX.8.063008

Fingerprint Dive into the research topics of 'Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co2Fe0.4Mn0.6Si Heusler alloy electrodes'. Together they form a unique fingerprint.

Cite this

@article{c020d1541c3c461ea0072379ad971993,

title = "Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co2Fe0.4Mn0.6Si Heusler alloy electrodes",

abstract = "The current perpendicular to film plane type giant magnetoresistance (CPP-GMR) effect in Co2Fe0.4Mn0.6Si/Ag83Mg17/Co2Fe0.4Mn0.6Si junctions was investigated. An epitaxially grown 5-nm-thick Ag83Mg17 film having partially ordered L12 structure was fabricated on the Co2Fe0.4Mn0.6Si layer by magnetron sputtering. CPP-GMR effects were observed in the submicrometer-sized junctions, and the maximum value of the observed (intrinsic) MR ratio was 40% (48%) at room temperature. The average change in the resistance-area product was 23mO&μm2 for the Ag-Mg junctions, which was higher than those of conventional CPP-GMR junctions using a Ag spacer layer.",

author = "Hiroyuki Narisawa and Takahide Kubota and Koki Takanashi",

year = "2015",

month = jun,

day = "1",

doi = "10.7567/APEX.8.063008",

language = "English",

volume = "8",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "6",

}

TY - JOUR

T1 - Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co2Fe0.4Mn0.6Si Heusler alloy electrodes

AU - Narisawa, Hiroyuki

AU - Kubota, Takahide

AU - Takanashi, Koki

PY - 2015/6/1

Y1 - 2015/6/1

N2 - The current perpendicular to film plane type giant magnetoresistance (CPP-GMR) effect in Co2Fe0.4Mn0.6Si/Ag83Mg17/Co2Fe0.4Mn0.6Si junctions was investigated. An epitaxially grown 5-nm-thick Ag83Mg17 film having partially ordered L12 structure was fabricated on the Co2Fe0.4Mn0.6Si layer by magnetron sputtering. CPP-GMR effects were observed in the submicrometer-sized junctions, and the maximum value of the observed (intrinsic) MR ratio was 40% (48%) at room temperature. The average change in the resistance-area product was 23mO&μm2 for the Ag-Mg junctions, which was higher than those of conventional CPP-GMR junctions using a Ag spacer layer.

AB - The current perpendicular to film plane type giant magnetoresistance (CPP-GMR) effect in Co2Fe0.4Mn0.6Si/Ag83Mg17/Co2Fe0.4Mn0.6Si junctions was investigated. An epitaxially grown 5-nm-thick Ag83Mg17 film having partially ordered L12 structure was fabricated on the Co2Fe0.4Mn0.6Si layer by magnetron sputtering. CPP-GMR effects were observed in the submicrometer-sized junctions, and the maximum value of the observed (intrinsic) MR ratio was 40% (48%) at room temperature. The average change in the resistance-area product was 23mO&μm2 for the Ag-Mg junctions, which was higher than those of conventional CPP-GMR junctions using a Ag spacer layer.

UR - http://www.scopus.com/inward/record.url?scp=84930749385&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930749385&partnerID=8YFLogxK

U2 - 10.7567/APEX.8.063008

DO - 10.7567/APEX.8.063008

M3 - Article

AN - SCOPUS:84930749385

VL - 8

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 6

M1 - 063008

ER -

Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co₂Fe_0.4Mn_0.6Si Heusler alloy electrodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint Dive into the research topics of 'Current perpendicular to film plane type giant magnetoresistance effect using a Ag-Mg spacer and Co<sub>2</sub>Fe<sub>0.4</sub>Mn<sub>0.6</sub>Si Heusler alloy electrodes'. Together they form a unique fingerprint.

Cite this