Current on-off operation of graphene transistor with dual gates and He ion irradiated channel

Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Song Lin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We demonstrate the current on-off operation in a novel dual-gated transistor with a He ion irradiated graphene channel in which defect-induced transport gap is formed. The transistor operation was performed by controlling the band configuration of gate-controlled p-i-n junction by independent biasing of top gates. The maximum current on-off ratio of nearly four orders of magnitude was obtained at a temperature of 250 K in the proposed device structure. It was also demonstrated that the transistor polarity can be changed between unipolar and ambipolar just by adjusting the gate bias of one of the dual gates, as expected from the device operation model.

Original languageEnglish
Pages (from-to)1608-1611
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume10
Issue number11
DOIs
Publication statusPublished - 2013 Nov
Externally publishedYes

Keywords

  • Graphene
  • Ion irradiation
  • Transistor
  • Transport gap

ASJC Scopus subject areas

  • Condensed Matter Physics

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