Current-injection terahertz lasing in distributed-feedback dual-gate graphene-channel field-effect transistor

Gen Tamamushi, Takayuki Watanabe, Alexander A. Dubinov, Hiroyuki Wako, Akira Satou, Tetsuya Suemitsu, Maxim Ryzhii, Victor Ryzhii, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A distributed-feedback (DFB) dual-gate graphene-channel transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with calculation based on DFB-Fabry-Perrot hybrid-mode modeling.

Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
Publication statusPublished - 2016 Dec 16
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: 2016 Jun 52016 Jun 10

Publication series

Name2016 Conference on Lasers and Electro-Optics, CLEO 2016

Other

Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
CountryUnited States
CitySan Jose
Period16/6/516/6/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Tamamushi, G., Watanabe, T., Dubinov, A. A., Wako, H., Satou, A., Suemitsu, T., Ryzhii, M., Ryzhii, V., & Otsuji, T. (2016). Current-injection terahertz lasing in distributed-feedback dual-gate graphene-channel field-effect transistor. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 [7788714] (2016 Conference on Lasers and Electro-Optics, CLEO 2016). Institute of Electrical and Electronics Engineers Inc..