Current-injected spectrally-narrowed emissions from an organic transistor

Takeshi Yamao; Yoichi Sakurai; Kohei Terasaki; Yasuhiro Shimizu; Hiroshi Jinnai; Shu Hotta

doi:10.1002/adma.201000171

Current-injected spectrally-narrowed emissions from an organic transistor

Takeshi Yamao, Yoichi Sakurai, Kohei Terasaki, Yasuhiro Shimizu, Hiroshi Jinnai, Shu Hotta

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

A novel organic LEFET device with a simple device constitution is presented. The device is equipped with a diffraction grating that is formed on the gate insulator so that it is located outside the channel region. When the device is operated with square-wave alternating gate voltages, the spectrally-narrowed emissions are definitively observed with FWHM □2 nm.

Original language	English
Pages (from-to)	3708-3712
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	33
DOIs	https://doi.org/10.1002/adma.201000171
Publication status	Published - 2010 Aug 1
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201000171

Cite this

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abstract = "A novel organic LEFET device with a simple device constitution is presented. The device is equipped with a diffraction grating that is formed on the gate insulator so that it is located outside the channel region. When the device is operated with square-wave alternating gate voltages, the spectrally-narrowed emissions are definitively observed with FWHM □2 nm.",

author = "Takeshi Yamao and Yoichi Sakurai and Kohei Terasaki and Yasuhiro Shimizu and Hiroshi Jinnai and Shu Hotta",

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AU - Yamao, Takeshi

AU - Sakurai, Yoichi

AU - Terasaki, Kohei

AU - Shimizu, Yasuhiro

AU - Jinnai, Hiroshi

AU - Hotta, Shu

PY - 2010/8/1

Y1 - 2010/8/1

N2 - A novel organic LEFET device with a simple device constitution is presented. The device is equipped with a diffraction grating that is formed on the gate insulator so that it is located outside the channel region. When the device is operated with square-wave alternating gate voltages, the spectrally-narrowed emissions are definitively observed with FWHM □2 nm.

AB - A novel organic LEFET device with a simple device constitution is presented. The device is equipped with a diffraction grating that is formed on the gate insulator so that it is located outside the channel region. When the device is operated with square-wave alternating gate voltages, the spectrally-narrowed emissions are definitively observed with FWHM □2 nm.

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Current-injected spectrally-narrowed emissions from an organic transistor

Abstract

ASJC Scopus subject areas

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