Abstract
A novel organic LEFET device with a simple device constitution is presented. The device is equipped with a diffraction grating that is formed on the gate insulator so that it is located outside the channel region. When the device is operated with square-wave alternating gate voltages, the spectrally-narrowed emissions are definitively observed with FWHM □2 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 3708-3712 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 22 |
| Issue number | 33 |
| DOIs | |
| Publication status | Published - 2010 Aug 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Yamao, T., Sakurai, Y., Terasaki, K., Shimizu, Y., Jinnai, H., & Hotta, S. (2010). Current-injected spectrally-narrowed emissions from an organic transistor. Advanced Materials, 22(33), 3708-3712. https://doi.org/10.1002/adma.201000171