Current-induced tunnel magnetoresistance due to spin accumulation in Au nanoparticles

S. Mitani, Y. Nogi, H. Wang, K. Yakushiji, F. Ernult, K. Takanashi

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15 Citations (Scopus)


Spin-dependent single electron tunneling was investigated in a magnetic double tunnel junction including Au nanoparticles as a center electrode. Tunnel magnetoresistance (TMR) clearly emerged with increasing spin-polarized current injected into Au nanoparticles and reached a maximum value of about 12% at 4.2 K. The observation indicates that spin accumulation occurs in Au nanoparticles and causes TMR. The spin relaxation time in Au nanoparticles, as estimated from the critical current for the appearance of TMR, is of the order of 10 ns, which is much longer than that in the bulk state.

Original languageEnglish
Article number152509
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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