Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions

T. Inokuchi, H. Sugiyama, Y. Saito, K. Inomata

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11 Citations (Scopus)

Abstract

The authors have investigated the dependence of the critical current density (Jc) for the current-induced magnetization switching (CIMS) on external magnetic fields applied along the hard axis of a free layer (H hard) and on the duration of pulse current in MgO-based magnetic tunnel junctions. The Jc and the intrinsic current density (J c0), derived from the dependence of the Jc on the pulse duration, decreased as |Hhard| increased. These reductions of Jc and Jc0 would be attributed to the decrease of energy barrier for CIMS and the increase of the spin transfer efficiency.

Original languageEnglish
Article number102502
JournalApplied Physics Letters
Volume89
Issue number10
DOIs
Publication statusPublished - 2006 Sep 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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