Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions with Perpendicular Anisotropy

Shinya Ishikawa, Eli C.I. Enobio, Hideo Sato, Shunsuke Fukami, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We investigate magnetic properties of CoFeB/Ta/[Co/Pd (Pt)] multilayers and properties of magnetic tunnel junctions (MTJs) with the structures as a recording layer. CoFeB/Ta/[Co/Pd] multilayer shows a lower damping constant α than that of CoFeB/Ta/[Co/Pt] multilayer. We evaluate current-induced magnetization switching (CIMS) properties of the MTJs with CoFeB/Ta/[Co/Pd (Pt)] multilayers with the junction diameter of 15 (13) nm that show similar thermal stability factor. CIMS is observed for the MTJ with a CoFeB/Ta/[Co/Pd] multilayer at zero magnetic field, whereas it is observed for the MTJ with the CoFeB/Ta/[Co/Pt] multilayer only in the presence of an external field.

Original languageEnglish
Article number7378992
JournalIEEE Transactions on Magnetics
Volume52
Issue number7
DOIs
Publication statusPublished - 2016 Jul

Keywords

  • Magnetic tunnel junction
  • Spintronics
  • multilayer
  • perpendicular magnetic anisotropy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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